? design assistance ? assembly assistance ? die handling consultancy ? hi - rel die qualification ? hot & cold die probing ? electrical test & trimming ? customised pack sizes / qtys ? support for all industry recognised ? 100% visual inspection contact baredie@micross.com for price, delivery and to place orders HMC156A supply formats: o waffle pack o gel pak o tape & reel ? onsite storage, stockholding & scheduling ? on - site failure analysis ? bespoke 24 hour monitored storage systems for secure long term product support o mil - std 883 condition a o mil - std 883 condition a ? on - site failure analysis www.analog.com www.micross.com
analog devices welcomes hittite microwave corporation no content on the attached documen t has changed www.analog.com www.hittite.com
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frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC156A gaas mmic passive frequency doubler, 0.7 - 2.4 ghz input v00.0111 general description features functional diagram c onversion loss: 15 db fo, 3fo, 4fo isolation: 38 db input drive level: 10 to 20 dbm electrical specifcations, t a = +25 c, as a function of drive level typical applications the hm c 156 a is suitable for: ? wireless local loop ? lmds, v s a t, and point-to-point radios ? u n ii & hiperl an ? test equipment the hm c 156 a is a miniature frequency doubler in a mmi c die. suppression of undesired fundamental and higher order harmonics is 38 db typical with respect to input signal levels. the doubler uses the same diode/balun technology used in hittite mmi c mixers, features small size and requires no d c bias. input = +10 dbm input = +15 dbm input = +20 dbm parameter min. typ. max. min. typ. max. min. typ. max. units frequency range, input 1.1 - 2.1 0.8 - 2.4 0.7 - 2.3 ghz frequency range, output 2.2 - 4.2 1.6 - 4.8 1.4 - 4.6 ghz c onversion loss 17 22 15 20 15 20 db fo isolation (with respect to input level) 42 47 43 47 27 35 db 3fo isolation (with respect to input level) 45 55 44 55 29 40 db 4fo isolation (with respect to input level) 28 38 31 38 25 35 db
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com conversion gain vs. drive level isolation @ +15 dbm drive level* input return loss vs. drive level output return loss @ +15 drive level *with respect to input level -40 -30 -20 -10 0 1 1.5 2 2.5 3 3.5 4 4.5 5 pin = 10 dbm pin = 15 dbm pin = 20 dbm conversion gain (db) output frequency (ghz) -16 -12 -8 -4 0 0 1 2 3 4 5 return loss (db) output frequency (ghz) -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 pin =10 dbm pin =15 dbm pin = 20 dbm return loss (db) input frequency (ghz) -100 -80 -60 -40 -20 0 0 2 4 6 8 10 fo 3fo 4fo isolation (db) frequency (ghz) HMC156A v00.0111 gaas mmic passive frequency doubler, 0.7 - 2.4 ghz input absolute maximum ratings input drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c ele c trost a ti c se n siti v e de v i c e obser v e h an dli n g pre ca utio n s
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing n otes: 1. a ll u n l a beled p a ds must be bo n ded to grou n d (8 tot a l). 2. a ll dime n sio n s i n i nc hes [millimeters] 3. a ll toler anc es a re 0.001 [0.025] 4. die thi c k n ess is 0.005 [0.127] 5. bo n d p a ds a re 0.004 [0.100] squ a re 6. equ a ll y sp ac ed a t 0.006 [0.150] c e n ters 7. b ac kside met a lliz a tio n : n o n e 8. bo n d p a d met a lliz a tio n : gold die packaging information [1] standard a lternate wp-13 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave c orporation. HMC156A v00.0111 gaas mmic passive frequency doubler, 0.7 - 2.4 ghz input pad n umber function description interface schematic 1 rfi n d c coupled and matched to 50 ohm. 2 rfout d c coupled and matched to 50 ohm. die bottom g n d die bottom must be connected to rf/d c ground. pad description
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC156A v00.0111 gaas mmic passive frequency doubler, 0.7 - 2.4 ghz input handling precautions follow these precautions to avoid permanent damage. storage: a ll bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do n ot attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients : suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with a usn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. epoxy die attach: a pply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 1.0 diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package. rf bonds should be as short as possible.
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